Biography
Harvey Beere is a Principal Research Associate of Molecular Beam Epitaxy (MBE) and Terahertz (THz) technologies in the Semiconductor Physics group. He received his first degree, in Electrical and Electronic Engineering, from Imperial College London in 1993 and his PhD from the University of Cambridge in 1999, studying the selective area growth of III-V semiconductor compounds using Ga+ FIB deposition during MBE growth.
Since then he has been working on III-V semiconductor physics and has extensive experience of the growth, fabrication and measurement of low dimensional electronic and optical structures. He has been co-author in over 500 papers with an h-index 53 Web of Science (68 Google Scholar).
Sawston Village College, Cambridge 1981-1986
Hills Road Sixth Form College, Cambridge 1986-1988
Ciba-Geigy Plastics, Duxford, Cambridge: Product development 1986-1987
MEng in Electrical and Electronic Engineering, Imperial College, University of London 1989-1993
PhD in III-V semiconductor growth using a FIB source in MBE, University of Cambridge 1993-1999
Research Associate, University of Cambridge 1999-2004
Senior Research Associate, University of Cambridge 2004-2018
Principal Research Associate, University of Cambridge 2018-2023
Director of Research, University of Cambridge 2023 -
Research
◾ Molecular beam epitaxy
◾ Device processing, fabrication and testing
◾ THz devices and systems
◾ THz quantum cascade lasers
◾ Low temperature electrical transport and optical measurements
◾ Very high mobility two-dimensional electron and hole gases
◾ Interactions between two-dimensional electron and hole gases
Publications
Publications on google scholar <a href="https://www.sp.phy.cam.ac.uk/%3Ca%20href%3D"https://scholar.google.co.uk/citations?user=EyGbDJoAAAAJ&hl=en/">https://scholar.google.co.uk/citations?user=EyGbDJoAAAAJ&hl=en/">here</a>