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Semiconductor Physics Group



I  obtained my PhD in 2011 from the University of Warwick under the supervision of Dr Gavin Bell.  Thereafter I spent 2 years at State University of New York at Buffalo, NY as a post-doc under Dr Steve Durbin, and then a further 2 years at the London Centre for Nanotechnology, University College London under Professor Paul Warburton.  In June 2015 I started in the Semiconductor Physics group in the Cavendish working under Professor David Ritchie.  


Broadly, my interests are in the growth of compound semiconductor and novel semi-metallic materials using molecular beam epitaxy, and the study of their basic electronic properties.  Materials that I am particularly interested in: 

  • III-V semiconductors: GaAs/AlGaAs and InGaAs/InAlGaAs heterostructures
  • Telluride-based materials with topologically protected electronic states
  • Nitrides, particularly I-VI-N2 such as ZnSnN2
  • Oxides, particularly transition metal oxides
  • Materials and device structures for solar energy harvesting

In terms of characterisation, I have previously made extensive use of XRD, XPS and SEM.  Since arriving at Cambridge I have been in charge of the MBE assessment cryostat and therefore made use of low temperature electrical measurements to characterise electronic device structures.  

Dr James  Aldous

Contact Details

Email address: 
Office 337.
Semiconductor Physics Research Group
Cavendish Laboratory
Department of Physics
University of Cambridge
Cambridge, UK
Not available for consultancy