Home LT-GaAs THz QCL ISB-Switch Publications Links
 

[1] Samir Rihani, Hideaki Page, Harvey E. Beere, David A. Ritchie and M. Pepper, Design and simulation of a THz QCL based on Gamma–X depopulation mechanism, Physica E, 41, 1240 (2009).

[2] Samir Rihani, Richard Faulks , Harvey Beere , Hideaki Page , Ian Gregory , Mike Evans, David Ritchie and Michael Pepper, Effect of defect saturation on terahertz emission and detection Properties of LT-GaAs photoconductive switches, Applied Physics Letters. 95, 051106 (2009).

[3] Samir Rihani, Richard Faulks, Harvey Beere, Ian. Farre, Mike Evans, Michael Pepper, and Dave Ritchie. Enhanced terahertz emission from a multilayered low temperature grown GaAs structure, Applied Physics Letters, 96, 091101 (2010).

[4] Samir Rihani, Hideaki Page and Harvey E. Beere, Quasibound states in semiconductor quantum well structures, Supperlattices and Microstructures. 47, 288 (2010).

[5] R. Faulks, S. Rihani, H. E. Beere, M. J. Evans, D. A. Ritchie, and M. Pepper. Pulsed terahertz time domain spectroscopy of vertically structured photoconductive antennas, Applied Physics Letters, 96, 081106 (2010).

[6] Samir Rihani, Hideaki Page and Michael Pepper, A Finite Element Method Application to Semiconductor Quantum Well Structures: Nonparabolic bound and quasibound states determination, in Theory, Modelling and Computational Methods for Semiconductor Materials and Nanostructures (TMCS), Manchester, UK, 2008.

[7] Samir Rihani, Richard Faulks, Harvey Beere, Mike Evans, Michael Pepper, and Dave Ritchie, Enhanced THz emission at low excitation powers from a multi-layered LT-GaAs structure with a mesa defined photoconductive gap, in UK Semiconductors 2009, Sheffield, 2009.

[8] S. Rihani, H. Beere, and D. Ritchie, A THz Quantum Cascade Laser Design Based on Resonant Gamma-X Depopulation Mechanism, Tenth International Conference on Intersubband Transitions in Quantum Wells (ITQW), Montreal, Canada, 2009