DIBL
Drain Induced Barrier Lowering
Press the play button at the bottom left to play the animation. Drain induced barrier lower, or DIBL is where the depletion from the source and drain Ohmic contact doping in the channel results in the barrier between source and drain being reduced in short gate-length MOSFETs. To reduce DIBL in short channel devices, the amount of p-type doping in the channel must be increased to increase the barrier height between source and drain. This prevents electrons quantum mechanically tunnelling from the source to the drain thereby increasing Ioff.
