The Varian Gen II MBE system is used to produce ultra-high quality GaAs/AlGaAs two-dimensional electron and hole gas heterostructures.

Research projects that depend on high mobility material from the Varian growth chamber include:

• Extremely clean one and two-dimensional electron and hole gases.
• High mobility bilayer two-dimensional electron and hole gases.
• Optical measurements of positively and negatively charged excitons in 2D systems.
• Measurements of magnetisation oscillations in clean two-dimensional electron systems.
• High-mobility induced electron gases.