The Semiconductor Physics group at the Cavendish Laboratory has three III-V semiconductor growth systems.

1. An in situ processing system which comprises two Vacuum Generators V80H Growth chambers ('A chamber' and 'C chamber' ) attached by ultra high vacuum (UHV) transfer tubes to a high resolution focussed ion beam system, a Scanning Tunnelling Microscope (STM) and a surface decontamination and etching system. This system is used largely for the fabrication of three dimensionally patterned semiconductor structures.
2. A Varian GEN II III-V MBE system which is used for the growth of very high purity epilayers. This system was used from 1984 to 1991 at Phillips Research Laboratories in Redhill by CT Foxon and JJ Harris. The system was installed at the Cavendish Laboratory in October 1991 and since then has been used for the growth of single and multiple 2DEGs and two dimensional hole gases. For more details see "Varian MBE"
3. A Focused Ion Molecular Beam Epitaxy (FIMBE) system. This purpose built system is based on a Vacuum Generators V80H Growth chamber, with a 30 keV focussed ion beam dopant source.