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| Semiconductor Physics Group | |
| University of Cambridge > Department of Physics > Semiconductor Physics Group > Research |
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PhD research projects available in SP PhD and Job Opportunities in SP |
The fractional quantum Hall effectClick here for a list of publications. The fractional quantum Hall effect (FQHE) is a fascinating manifestation of simple collective behaviour in a two-dimensional system of strongly interacting electrons. At particular magnetic fields, the electron gas condenses into a remakable state with liquid-like properties. This state is very delicate, requiring high quality material with a low carrier concentration, and extremely low temperatures. As in the integer Quantum Hall Effect, a series of plateaux forms in the Hall resistance. Each particular values of magnetic field corresponds to a filling factor (the ratio of electrons to magnetic flux quanta) nu=p/q, where p and q are integers with no common factors). q always turns out to be an odd number. The principal series of such fractions are 1/3, 2/5, 3/7 etc, and 2/3, 3/5, 4/7, etc. ![]() There are two main theories of the FQHE:
The importance of the FQHE was recognised in 1998 by the award of the Nobel Prize for Physics to Tsui, Stormer and Laughlin, see this Nobel prize web site for more information. Some of our research on the FQHE: |
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