Semiconductor Physics Group
Semiconductor Physics Group, Cavendish Laboratory
Melanie Tribble
E-mail: mjt1001@cam.ac.uk
Office phone number: +44 (0)1223 337469
Fax: +44 (0)1223 337271
Group Secretary: +44 (0)1223 377482
Research interests:
I assist with fabrication and characterisation of MBE-grown semiconductor layers. The work involves Clean Room processing using optical lithography techniques together with the operation of low temperature Hall effect apparatus, C-V etch profiler and X-ray diffractometer. Other duties include collation of data and providing general assistance and maintenance of the Semiconductor Clean Room.
Publications:
V Chabasseur-Molyneux, J E F Frost, M J Tribble, M P Grimshaw, D A Ritchie, A C Churchill, G A C Jones, M Pepper and J H Burroughes, "Low temperature operation of Ge-Ag ohmic contacts to a high mobility two dimensional electron gas", J. Appl. Phys., 74, 9, pp. 5883-5885 (1993)
R J Evans, M P Grimshaw, J H Burroughes, M L Leadbeater, M J Tribble, D A Ritchie, G A C Jones and M Pepper, "Double two-dimensional electron gas structure formed by molecular beam epitaxy regrowth on an ex situ patterned n+-GaAs back gate", Appl. Phys. Lett., 65, 15, pp. 1943-1945 (1994)
N K Patel, J H Burroughes, M J Tribble, E H Linfield, A C Churchill, D A Ritchie and G A C Jones, "Independent contacting to electron layers in a double quantum well system using Pd-Ge shallow ohmic contacts", Appl. Phys Lett, 65, 7, pp. 851-853 (1994)
See Also:
My Husband Peter's home page.
